Ngôn ngữ trình duyệt của bạn hiện đang là tiếng Việt. Bạn có muốn chuyển sang trang tiếng Việt không?Chuyển sang trang tiếng Việt
FDN5618P Poster SOT23 MOS Field Effect Hole Integrated Circuit complete original
FDN5618P Poster SOT23 MOS Field Effect Hole Integrated Circuit complete original
FDN5618P Poster SOT23 MOS Field Effect Hole Integrated Circuit complete original
FDN5618P Poster SOT23 MOS Field Effect Hole Integrated Circuit complete original

FDN5618P Poster SOT23 MOS Field Effect Hole Integrated Circuit complete original

ManufacturerShenzhen City, Shenzhen City, Zheng City Industries Ltd.
CategoryField effect tube (MOSFET)
Price0.1
BrandON / Ansemey
ModelFDN5618P
CoverSOT-23
Batch Number21+
FET TypeContact us.
VdsContact us.
Leaking of polar currents (Id)Contact us.
Leak-source conductive resistance (RDS On)Contact us.
Fence power (Vgs)Contact us.
Fence charge (Qg)Contact us.
Reverse recovery timeContact us.
Maximum deplete powerCC BY-NC-ND 2.0
Configure TypeContact us.
Working temperature rangeContact us.
Install TypeContact us.

Product Display

Contact Us